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SI4946BEY-T1-GE3
- Part No
- SI4946BEY-T1-GE3
- Manufacturer
- Vishay
- Description
- SI4946BEY-T1-GE3 Dual N-channel MOSFET Transistor, 6.5 A, 60 V, 8-Pin SOIC | Siliconix / Vishay SI4946BEY-T1-GE3
- Datasheet
- SI4946BEY-T1-GE3
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6.5 A |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 41 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Element Configuration | Dual |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 840 pF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 3.7 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Power Dissipation | 2.4 W |
| Rds On Max | 41 mΩ |
| Resistance | 41 MΩ |
| Rise Time | 12 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 2.4 V |
| Turn-Off Delay Time | 25 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 506.605978 mg |
| Height | 1.75 mm |
| Length | 5 mm |
| Width | 4 mm |
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