IRF840APBF Generic image

IRF840APBF

Part No
IRF840APBF
Manufacturer
Vishay
Description
MOSFET N-CH 500V 8A TO-220AB | Siliconix / Vishay IRF840APBF
Datasheet
IRF840APBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8 A
    Current Rating 8 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 850 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 19 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.018 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 125 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Bulk
    Power Dissipation 125 W
    Rds On Max 850 mΩ
    Resistance 850 mΩ
    Rise Time 23 ns
    Schedule B 8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 26 ns
    Turn-On Delay Time 11 ns
    Voltage Rating (DC) 500 V
    Case/Package TO-220AB
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.000006 g
    Height 19.89 mm
    Length 10.41 mm
    Width 4.7 mm
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