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SI4890DY-T1
- Part No
- SI4890DY-T1
- Manufacturer
- Vishay
- Description
- Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Datasheet
- SI4890DY-T1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 11 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 12 mΩ |
| Element Configuration | Single |
| Fall Time | 17 ns |
| Gate to Source Voltage (Vgs) | 25 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 2.5 W |
| Rise Time | 8.5 ns |
| Turn-Off Delay Time | 35 ns |
| Case/Package | SO |
| Number of Terminals | 8 |
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