PUMH13 Generic image

PUMH13

Part No
PUMH13
Manufacturer
NXP
Description
Bipolar (Bjt) Array Transistor, Brt, Npn, 50 V, 200 Mw, 100 Ma, 100, Sot-363
Datasheet
PUMH13
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Ambient Temperature Range High 150 °C
    Collector Base Voltage (VCBO) 50 V
    Collector Emitter Breakdown Voltage 50 V
    Collector Emitter Saturation Voltage 100 mV
    Collector Emitter Voltage (VCEO) 50 V
    Emitter Base Voltage (VEBO) 5 V
    Gain Bandwidth Product 230 MHz
    hFE Min 100
    Max Collector Current 100 mA
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 300 mW
    Min Operating Temperature -65 °C
    Number of Elements 2
    Packaging Cut Tape
    Polarity NPN
    Power Dissipation 200 mW
    Transition Frequency 230 MHz
    Case/Package SOT-363
    Contact Plating Tin
    Number of Pins 6
    Number of Terminals 6
    Height 1.1 mm
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