BF1212R Generic image

BF1212R

Part No
BF1212R
Manufacturer
NXP
Description
Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet
BF1212R
Test Report
Available
Samples
Available

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    Availability:
    Upon a request

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 30 mA
    Current Rating 30 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 180 mW
    Min Breakdown Voltage 6 V
    Number of Elements 1
    Packaging Cut Tape
    Voltage Rating (DC) 6 V
    Case/Package SOT
    Contact Plating Tin
    Number of Pins 4
    Number of Terminals 4
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