PHB32N06LT Generic image

PHB32N06LT

Part No
PHB32N06LT
Manufacturer
NXP
Description
Power Field-Effect Transistor, 34A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 34 A
    Drain to Source Resistance 43 mΩ
    Max Operating Temperature 175 °C
    Max Power Dissipation 97 W
    Min Breakdown Voltage 60 V
    Number of Elements 1
    Number of Terminals 2
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