PBSS8110Y Generic image

PBSS8110Y

Part No
PBSS8110Y
Manufacturer
NXP
Description
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
Datasheet
PBSS8110Y
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 120 V
    Collector Emitter Breakdown Voltage 100 V
    Collector Emitter Saturation Voltage 200 mV
    Collector Emitter Voltage (VCEO) 100 V
    Emitter Base Voltage (VEBO) 5 V
    hFE Min 80
    Max Collector Current 1 A
    Max Frequency 100 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 625 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Cut Tape
    Polarity NPN
    Power Dissipation 290 mW
    Transition Frequency 100 MHz
    Case/Package SOT-363
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Height 1 mm
    Length 2.2 mm
    Width 1.35 mm
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