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NTGS5120PT1G
- Part No
- NTGS5120PT1G
- Manufacturer
- onsemi
- Description
- NTGS5120PT1G P-channel MOSFET Transistor; 2.9 A; 60 V; 6-Pin TSOP
- Datasheet
- NTGS5120PT1G
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1.8 A |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 111 mΩ |
| Element Configuration | Single |
| Fall Time | 4.9 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 942 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 1.1 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -3 V |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.4 W |
| Rds On Max | 111 mΩ |
| Resistance | 111 MΩ |
| Rise Time | 4.9 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -3 V |
| Turn-Off Delay Time | 38 ns |
| Turn-On Delay Time | 8.7 ns |
| Case/Package | TSOP |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Height | 1 mm |
| Length | 3.1 mm |
| Width | 1.7 mm |
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