EMT1DXV6T1 Generic image

EMT1DXV6T1

Part No
EMT1DXV6T1
Manufacturer
onsemi
Description
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon
Datasheet
EMT1DXV6T1
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -50 V
    Collector Emitter Breakdown Voltage 60 V
    Collector Emitter Saturation Voltage -500 mV
    Collector Emitter Voltage (VCEO) 60 V
    Current Rating -100 mA
    Element Configuration Dual
    Emitter Base Voltage (VEBO) 6 V
    Gain Bandwidth Product 140 MHz
    hFE Min 120
    Max Collector Current 100 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 500 mW
    Min Operating Temperature -55 °C
    Number of Elements 2
    Packaging Tape and Reel
    Polarity PNP
    Transition Frequency 140 MHz
    Voltage Rating (DC) -60 V
    Case/Package SOT-563-6
    Contact Plating Tin
    Number of Pins 6
    Number of Terminals 6
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