NTD6600NT4G Generic image

NTD6600NT4G

Part No
NTD6600NT4G
Manufacturer
onsemi
Description
MOSFET N-CH 100V 12A DPAK
Datasheet
NTD6600NT4G
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 12 A
    Current Rating 12 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 146 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 50 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 700 pF
    Max Operating Temperature 175 °C
    Max Power Dissipation 1.28 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 56.6 W
    Rds On Max 146 mΩ
    Rise Time 75 ns
    Turn-Off Delay Time 26 ns
    Turn-On Delay Time 10.5 ns
    Voltage Rating (DC) 100 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
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