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NTD4808N-35G
- Part No
- NTD4808N-35G
- Manufacturer
- onsemi
- Description
- Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
- Datasheet
- NTD4808N-35G
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9.8 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 12.4 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 5.6 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.538 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 54.6 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 2 W |
| Rds On Max | 8 mΩ |
| Rise Time | 102 ns |
| Turn-Off Delay Time | 11 ns |
| Case/Package | TO-251-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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