NDT454P Generic image

NDT454P

Part No
NDT454P
Manufacturer
onsemi
Description
P-Channel Enhancement Mode Field Effect Transistor -30V, -5.9A, 50mΩ
Datasheet
NDT454P
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.9 A
    Current Rating -5.9 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 50 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Dual Supply Voltage -30 V
    Element Configuration Single
    Fall Time 45 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 950 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 3 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -65 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1.1 W
    Rds On Max 50 mΩ
    Resistance 50 mΩ
    Rise Time 18 ns
    Schedule B 8541290080
    Termination SMD/SMT
    Threshold Voltage -2.7 V
    Turn-Off Delay Time 80 ns
    Turn-On Delay Time 10 ns
    Voltage Rating (DC) -30 V
    Case/Package SOT-223
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Weight 250.2 mg
    Height 1.8 mm
    Length 6.7 mm
    Width 3.7 mm
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