NDB6030PL Generic image

NDB6030PL

Part No
NDB6030PL
Manufacturer
onsemi
Description
P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -30A, 42mΩ
Datasheet
NDB6030PL
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 30 A
    Current Rating -30 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 25 mΩ
    Element Configuration Single
    Fall Time 52 ns
    Gate to Source Voltage (Vgs) 16 V
    Input Capacitance 1.57 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 75 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 75 W
    Rds On Max 25 mΩ
    Resistance 25 mΩ
    Rise Time 60 ns
    Turn-Off Delay Time 50 ns
    Turn-On Delay Time 12.5 ns
    Voltage Rating (DC) -30 V
    Case/Package D2PAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Terminals 2
    Weight 1.31247 g
    Height 11.33 mm
    Length 10.67 mm
    Width 4.83 mm
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