IRLR3636TRLPBF Generic image

IRLR3636TRLPBF

Part No
IRLR3636TRLPBF
Manufacturer
Infineon
Description
MOSFET N-CH 60V 50A DPAK / N-Channel 60 V 50A (Tc) 143W (Tc) Surface Mount D-Pak
Datasheet
IRLR3636TRLPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 50 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 8.3 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 69 ns
    Gate to Source Voltage (Vgs) 16 V
    Input Capacitance 3.779 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 143 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 6.8 mΩ
    Package Quantity 3000
    Power Dissipation 143 W
    Rds On Max 6.8 mΩ
    Rise Time 216 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 43 ns
    Turn-On Delay Time 45 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Terminals 2
    Height 2.52 mm
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