IRF6726MTR1PBF Generic image

IRF6726MTR1PBF

Part No
IRF6726MTR1PBF
Manufacturer
Infineon
Description
MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.3 mOhm, ID 32A, DirectFET
Datasheet
IRF6726MTR1PBF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 32 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 1.7 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 17 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 6.14 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.8 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -40 °C
    Nominal Vgs 1.7 V
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 1.7 mΩ
    Package Quantity 1000
    Packaging Tape & Reel
    Power Dissipation 2.8 W
    Rds On Max 1.7 mΩ
    Recovery Time 41 ns
    Rise Time 30 ns
    Schedule B 8541290080
    Termination SMD/SMT
    Threshold Voltage 1.7 V
    Turn-Off Delay Time 25 ns
    Turn-On Delay Time 20 ns
    Mount Surface Mount
    Number of Pins 7
    Number of Terminals 3
    Height 676 µm
    Length 5.45 mm
    Width 5.05 mm
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