IRFS3607TRLPBF Generic image

IRFS3607TRLPBF

Part No
IRFS3607TRLPBF
Manufacturer
Infineon
Description
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - D2PAK
Datasheet
IRFS3607TRLPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 80 A
    Drain to Source Breakdown Voltage 75 V
    Drain to Source Resistance 9 mΩ
    Drain to Source Voltage (Vdss) 75 V
    Element Configuration Single
    Fall Time 96 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 3.07 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 140 W
    Min Breakdown Voltage 75 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 9 mΩ
    Package Quantity 800
    Power Dissipation 140 W
    Rds On Max 9 mΩ
    Rise Time 110 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 43 ns
    Turn-On Delay Time 16 ns
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 5.084 mm
    Length 10.668 mm
    Width 9.65 mm
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