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IRFB5615PBF
- Part No
- IRFB5615PBF
- Manufacturer
- Infineon
- Description
- 150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
- Datasheet
- IRFB5615PBF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 35 A |
| Drain to Source Breakdown Voltage | 150 V |
| Drain to Source Resistance | 39 mΩ |
| Drain to Source Voltage (Vdss) | 150 V |
| Element Configuration | Single |
| Fall Time | 13.2 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.75 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 144 W |
| Min Breakdown Voltage | 150 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 39 mΩ |
| Package Quantity | 1000 |
| Power Dissipation | 144 W |
| Rds On Max | 39 mΩ |
| Recovery Time | 120 ns |
| Resistance | 39 MΩ |
| Rise Time | 23.1 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 17.2 ns |
| Turn-On Delay Time | 8.9 ns |
| Case/Package | TO-220AB |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Height | 19.8 mm |
| Length | 10.668 mm |
| Width | 4.826 mm |
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