IRFR825PBF Generic image

IRFR825PBF

Part No
IRFR825PBF
Manufacturer
Infineon
Description
MOSFET N-CH 500V 6A DPAK
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 1.05 Ω
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 20 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.346 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 119 W
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 1.3 Ω
    Package Quantity 3000
    Power Dissipation 119 W
    Rds On Max 1.3 Ω
    Recovery Time 138 ns
    Rise Time 25 ns
    Threshold Voltage 3 V
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 8.5 ns
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Height 2.52 mm
    Length 6.73 mm
    Width 6.22 mm
    added to cart View cart