IRFH5007TRPBF Generic image

IRFH5007TRPBF

Part No
IRFH5007TRPBF
Manufacturer
Infineon
Description
Single N-Channel 75 V 5.9 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Datasheet
IRFH5007TRPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 17 A
    Drain to Source Breakdown Voltage 75 V
    Drain to Source Resistance 5.9 mΩ
    Drain to Source Voltage (Vdss) 75 V
    Fall Time 11 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 4.29 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 250 W
    Min Breakdown Voltage 75 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2 V
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 5.9 mΩ
    Package Quantity 4000
    Packaging Tape & Reel
    Power Dissipation 3.6 W
    Rds On Max 5.9 mΩ
    Resistance 5.9 MΩ
    Rise Time 14 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 10 ns
    Case/Package QFN
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Height 1.1 mm
    Length 6.1468 mm
    Width 5.15 mm
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