AUIRFR3710Z Generic image

AUIRFR3710Z

Part No
AUIRFR3710Z
Manufacturer
Infineon
Description
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package
Datasheet
AUIRFR3710Z
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 42 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 18 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 42 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.93 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 140 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 140 W
    Rds On Max 18 mΩ
    Resistance 18 MΩ
    Rise Time 43 ns
    Schedule B 8541290080
    Threshold Voltage 2 V
    Turn-Off Delay Time 53 ns
    Turn-On Delay Time 14 ns
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.52 mm
    Length 6.73 mm
    Width 6.22 mm
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