IRF8721TRPBF Generic image

IRF8721TRPBF

Part No
IRF8721TRPBF
Manufacturer
Infineon
Description
Single N-Channel 30V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8
Datasheet
IRF8721TRPBF
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 14 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 8.5 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 7 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.04 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.35 V
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 8.5 mΩ
    Package Quantity 4000
    Packaging Tape & Reel
    Power Dissipation 2.5 W
    Rds On Max 8.5 mΩ
    Resistance 8.5 MΩ
    Rise Time 11 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 8.1 ns
    Turn-On Delay Time 8.2 ns
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.75 mm
    Length 4.9784 mm
    Width 3.9878 mm
    added to cart View cart