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IPB054N06N3G
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Product Specification
| Specification | Value |
|---|---|
| Package | Bulk |
| ECCN | EAR99 |
| HTSUS | 8542.39.0001 |
| Fake Threat In the Open Market | 59pct. |
| Win Source Part Number | 874703-IPB054N06N3G |
| Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Temperature Range - Operating | -55°C ~ 175°C (TJ) |
| Standard Package | 1 pcs |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Series | OptiMOS™ 3 |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 115W (Tc) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 58µA |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 30 V |
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