IRF7410TRPBF Generic image

IRF7410TRPBF

Part No
IRF7410TRPBF
Manufacturer
Infineon
Description
Mosfet, Power; P-ch; Vdss -12V; Rds(on) 7 Milliohms; Id -16A; SO-8; Pd 2.5W; Vgs +/-8V
Datasheet
IRF7410TRPBF
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 16 A
    Drain to Source Breakdown Voltage -12 V
    Drain to Source Resistance 7 mΩ
    Drain to Source Voltage (Vdss) -12 V
    Dual Supply Voltage 12 V
    Element Configuration Single
    Fall Time 200 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 8.676 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs 900 mV
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 7 mΩ
    Package Quantity 4000
    Packaging Tape & Reel
    Power Dissipation 2.5 W
    Rds On Max 7 mΩ
    Resistance 7 MΩ
    Rise Time 12 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 900 mV
    Turn-Off Delay Time 271 ns
    Turn-On Delay Time 13 ns
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.75 mm
    Length 4.9784 mm
    Width 3.9878 mm
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