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IRF7379TRPBF
- Part No
- IRF7379TRPBF
- Manufacturer
- Infineon
- Description
- IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8
- Datasheet
- IRF7379TRPBF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.8 A |
| Current Rating | 5.8 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 45 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 520 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| On-State Resistance | 75 mΩ |
| Package Quantity | 4000 |
| Packaging | Tape & Reel |
| Power Dissipation | 2.5 W |
| Rds On Max | 45 mΩ |
| Voltage Rating (DC) | 30 V |
| Case/Package | SO |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Height | 1.4986 mm |
| Length | 4.9784 mm |
| Width | 3.9878 mm |
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