IPB60R600CP Generic image

IPB60R600CP

Part No
IPB60R600CP
Manufacturer
Infineon
Description
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) D2PAK T/R
Datasheet
IPB60R600CP
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.1 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 600 mΩ
    Dual Supply Voltage 650 V
    Element Configuration Single
    Fall Time 17 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 550 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 60 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3 V
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 60 W
    Rds On Max 600 mΩ
    Rise Time 12 ns
    Termination SMD/SMT
    Threshold Voltage 3 V
    Turn-Off Delay Time 75 ns
    Turn-On Delay Time 17 ns
    Case/Package TO-263-3
    Number of Pins 3
    Number of Terminals 2
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