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IRF7343TRPBF
- Part No
- IRF7343TRPBF
- Manufacturer
- Infineon
- Description
- IRF7343PBF Dual N/P-channel MOSFET Transistor; 3.4 A; 4.7 A; 55 V; 8-Pin SOIC
- Datasheet
- IRF7343TRPBF
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 4.7 A |
| Current Rating | 4.7 A |
| Drain to Source Breakdown Voltage | 55 V |
| Drain to Source Resistance | 50 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 740 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2 W |
| Min Breakdown Voltage | 55 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 1 V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| On-State Resistance | 50 mΩ |
| Package Quantity | 4000 |
| Packaging | Tape & Reel |
| Power Dissipation | 2 W |
| Rds On Max | 50 mΩ |
| Resistance | 105 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 1 V |
| Case/Package | SOIC |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Height | 1.75 mm |
| Length | 5 mm |
| Width | 4 mm |
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