BCR162E6327HTSA1 Generic image

BCR162E6327HTSA1

Part No
BCR162E6327HTSA1
Manufacturer
Infineon
Description
Bipolar junction transistor, PNP, 100 mA, 50 V, SMD, SOT-23, BCR162E6327
Datasheet
BCR162E6327HTSA1
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 10 V
    Collector Emitter Breakdown Voltage 50 V
    Collector Emitter Saturation Voltage 300 mV
    Collector Emitter Voltage (VCEO) 50 V
    Current Rating -100 mA
    Element Configuration Single
    hFE Min 20
    Input Resistance 4.7 kΩ
    Max Collector Current 100 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 200 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Package Quantity 3000
    Packaging Tape & Reel
    Polarity PNP
    Power Dissipation 200 mW
    Transition Frequency 200 MHz
    Voltage Rating (DC) -50 V
    Case/Package SOT
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 900 µm
    Length 2.9 mm
    Width 1.3 mm
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