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IRF6785MTRPBF
- Part No
- IRF6785MTRPBF
- Manufacturer
- Infineon
- Description
- N-Channel 200 V 100 mOhm 36 nC SMT HEXFET® Power Mosfet - DIRECTFET MZ
- Datasheet
- IRF6785MTRPBF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3.4 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 100 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Fall Time | 14 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.5 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 57 W |
| Manufacturer Package Identifier | MG-WDSON-5 |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -40 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 100 mΩ |
| Package Quantity | 4800 |
| Packaging | Tape & Reel |
| Power Dissipation | 2.8 W |
| Rds On Max | 100 mΩ |
| Rise Time | 8.6 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 7.2 ns |
| Turn-On Delay Time | 6.2 ns |
| Mount | Surface Mount |
| Number of Pins | 5 |
| Number of Terminals | 3 |
| Height | 700 µm |
| Length | 6.35 mm |
| Width | 5.05 mm |
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