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BSC100N03MSGATMA1
- Part No
- BSC100N03MSGATMA1
- Manufacturer
- Infineon
- Description
- Transistor: N-MOSFET; unipolar; 30V; 41A; 30W; PG-TDSON-8
- Datasheet
- BSC100N03MSGATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 12 A |
| Drain to Source Resistance | 12 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Input Capacitance | 1.3 nF |
| Max Dual Supply Voltage | 30 V |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 30 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 10 mΩ |
| Package Quantity | 5000 |
| Packaging | Tape & Reel |
| Power Dissipation | 30 W |
| Rds On Max | 10 mΩ |
| Rise Time | 4.8 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
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