IRF6775MTR1PBF Generic image

IRF6775MTR1PBF

Part No
IRF6775MTR1PBF
Manufacturer
Infineon
Description
MOSFET [IR] IRF6775MTR1PBF MOSFET
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.9 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 56 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Dual Supply Voltage 150 V
    Element Configuration Dual
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.411 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 89 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -40 °C
    Nominal Vgs 5 V
    Number of Elements 1
    Power Dissipation 2.8 W
    Rds On Max 56 mΩ
    Resistance 56 MΩ
    Rise Time 7.8 ns
    Termination SMD/SMT
    Threshold Voltage 5 V
    Turn-Off Delay Time 5.8 ns
    Turn-On Delay Time 5.9 ns
    Mount Surface Mount
    Number of Pins 7
    Number of Terminals 3
    Height 508 µm
    Length 5.45 mm
    Width 5.05 mm
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