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IPB80N06S2L05ATMA1
- Part No
- IPB80N06S2L05ATMA1
- Manufacturer
- Infineon
- Description
- Mosfet Transistor, N Channel, 80 A, 55 V, 0.0041 Ohm, 4.5 V, 1.6 V Rohs Compliant: Yes
- Datasheet
- IPB80N06S2L05ATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 80 A |
| Drain to Source Resistance | 5.7 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Fall Time | 90 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 5.7 nF |
| Max Dual Supply Voltage | 55 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 300 W |
| Min Breakdown Voltage | 55 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 4.5 mΩ |
| Package Quantity | 1000 |
| Packaging | Tape & Reel |
| Power Dissipation | 300 W |
| Rds On Max | 4.5 mΩ |
| Rise Time | 93 ns |
| Turn-Off Delay Time | 67 ns |
| Turn-On Delay Time | 19 ns |
| Case/Package | TO-263-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
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