IRF5M3710 Generic image

IRF5M3710

Part No
IRF5M3710
Manufacturer
Infineon
Description
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Datasheet
IRF5M3710
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 35 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 30 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Gate to Source Voltage (Vgs) 20 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 125 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 125 W
    Schedule B 8541290080
    Body Material Metal
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    added to cart View cart