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IPA80R1K4P7
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Product Specification
| Specification | Value |
|---|---|
| Win Source Part Number | 874655-IPA80R1K4P7 |
| Fake Threat In the Open Market | 37pct. |
| Temperature Range - Operating | -55°C ~ 150°C (TJ) |
| Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Package | Bulk |
| Product Status | Active |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | PG-TO220-3-31 Full Pack |
| Standard Package | 1 pcs |
| HTSUS | 0000.00.0000 |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 24W (Tc) |
| Series | CoolMOS™ |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V |
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