IRF530NSPBF Generic image

IRF530NSPBF

Part No
IRF530NSPBF
Manufacturer
Infineon
Description
Mosfet, Power; N-ch; Vdss 100V; Rds(on) 90MILLIOHMS; Id 17A; D2PAK; Pd 70W; Vgs +/-20V
Datasheet
IRF530NSPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 17 A
    Current Rating 17 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 90 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Dual Supply Voltage 100 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 920 pF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 79 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 90 mΩ
    Package Quantity 1000
    Packaging Bulk
    Power Dissipation 3.8 W
    Rds On Max 90 mΩ
    Recovery Time 140 ns
    Resistance 90 MΩ
    Rise Time 22 ns
    Termination SMD/SMT
    Threshold Voltage 4 V
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 9.2 ns
    Voltage Rating (DC) 100 V
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 5.084 mm
    Length 10.668 mm
    Width 9.65 mm
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