Generic image
IPS70R1K4CEAKMA1
- Part No
- IPS70R1K4CEAKMA1
- Manufacturer
- Infineon
- Description
- MOSFET N-CH 700V 5.4A TO251 / N-Channel 700 V 5.4A (Tc) 53W (Tc) Through Hole PG-TO251-3-11
- Datasheet
- IPS70R1K4CEAKMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.4 A |
| Drain to Source Breakdown Voltage | 700 V |
| Drain to Source Resistance | 1.4 Ω |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 225 pF |
| Max Dual Supply Voltage | 700 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 53 W |
| Min Breakdown Voltage | 700 V |
| Min Operating Temperature | -40 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 1.4 Ω |
| Package Quantity | 1500 |
| Power Dissipation | 53 W |
| Rds On Max | 1.4 Ω |
| Turn-Off Delay Time | 33 ns |
| Turn-On Delay Time | 7.7 ns |
| Case/Package | TO-251-3 |
| Mount | Surface Mount |
| Number of Terminals | 3 |
| Height | 8.75 mm |
added to cart
View cart
Related Products
