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IPI50R299CP
- Part No
- IPI50R299CP
- Manufacturer
- Infineon
- Description
- N-CHANNEL POWER MOSFET
- Datasheet
- IPI50R299CP
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 12 A |
| Drain to Source Breakdown Voltage | 550 V |
| Drain to Source Resistance | 299 mΩ |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.19 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 104 W |
| Min Breakdown Voltage | 500 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 104 W |
| Rds On Max | 299 mΩ |
| Rise Time | 14 ns |
| Turn-Off Delay Time | 80 ns |
| Case/Package | TO-262-3 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
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