IPD60R600E6ATMA1 Generic image

IPD60R600E6ATMA1

Part No
IPD60R600E6ATMA1
Manufacturer
Infineon
Description
MOSFET N-CH 600V 7.3A TO252 / Trans MOSFET N-CH 650V 7.3A Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet
IPD60R600E6ATMA1
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7.3 A
    Drain to Source Resistance 600 mΩ
    Drain to Source Voltage (Vdss) 600 V
    Max Dual Supply Voltage 600 V
    Max Operating Temperature 150 °C
    Max Power Dissipation 63 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 600 mΩ
    Package Quantity 2500
    Packaging Tape & Reel
    Power Dissipation 63 W
    Mount Surface Mount
    Number of Terminals 2
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