BSC010N04LSIATMA1 Generic image

BSC010N04LSIATMA1

Part No
BSC010N04LSIATMA1
Manufacturer
Infineon
Description
Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Datasheet
BSC010N04LSIATMA1
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 37 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 1.4 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Fall Time 17 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 6.2 nF
    Max Dual Supply Voltage 40 V
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 139 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 1.05 mΩ
    Package Quantity 5000
    Packaging Tape & Reel
    Power Dissipation 2.5 W
    Rds On Max 1.05 mΩ
    Rise Time 48 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Turn-Off Delay Time 33 ns
    Turn-On Delay Time 9 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.1 mm
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