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IPD048N06L3GBTMA1
- Part No
- IPD048N06L3GBTMA1
- Manufacturer
- Infineon
- Description
- Single N-Channel 60 V 4.8 mOhm 37 nC OptiMOS Power Mosfet - DPAK
- Datasheet
- IPD048N06L3GBTMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 90 A |
| Drain to Source Resistance | 4.8 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Fall Time | 12 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 6.3 nF |
| Max Dual Supply Voltage | 60 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 115 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 4.8 mΩ |
| Package Quantity | 2500 |
| Packaging | Tape & Reel |
| Power Dissipation | 115 W |
| Rds On Max | 4.8 mΩ |
| Rise Time | 5 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 56 ns |
| Turn-On Delay Time | 11 ns |
| Case/Package | TO-252-3 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
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