IPB144N12N3GATMA1 Generic image

IPB144N12N3GATMA1

Part No
IPB144N12N3GATMA1
Manufacturer
Infineon
Description
Single N-Channel 120 V 14.4 mOhm 37 nC OptiMOS™ Power Mosfet - D2PAK
Datasheet
IPB144N12N3GATMA1
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 56 A
    Drain to Source Resistance 14.4 mΩ
    Drain to Source Voltage (Vdss) 120 V
    Fall Time 4 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.42 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 107 W
    Min Breakdown Voltage 120 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    On-State Resistance 14.4 mΩ
    Package Quantity 1000
    Packaging Tape & Reel
    Power Dissipation 107 W
    Rise Time 9 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 16 ns
    Case/Package TO-263
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
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