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IPB70N10SL16ATMA1
- Part No
- IPB70N10SL16ATMA1
- Manufacturer
- Infineon
- Description
- 100V, N-Ch, 16 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™, PG-TO263-3, RoHS
- Datasheet
- IPB70N10SL16ATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 70 A |
| Drain to Source Resistance | 25 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Fall Time | 95 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 4.54 nF |
| Max Dual Supply Voltage | 100 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 250 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 16 mΩ |
| Package Quantity | 1000 |
| Packaging | Tape & Reel |
| Power Dissipation | 250 W |
| Rds On Max | 16 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 250 ns |
| Turn-On Delay Time | 70 ns |
| Case/Package | TO-263-3 |
| Mount | Surface Mount |
| Number of Terminals | 2 |
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