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IPB031NE7N3GATMA1
- Part No
- IPB031NE7N3GATMA1
- Manufacturer
- Infineon
- Description
- MOSFET N-CH 75V 100A TO263-3
- Datasheet
- IPB031NE7N3GATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 100 A |
| Drain to Source Resistance | 3.1 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 6.11 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 214 W |
| Min Breakdown Voltage | 75 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 3.1 mΩ |
| Package Quantity | 1000 |
| Packaging | Tape & Reel |
| Power Dissipation | 214 W |
| Rds On Max | 3.1 mΩ |
| Rise Time | 85 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 40 ns |
| Turn-On Delay Time | 16 ns |
| Case/Package | TO-263-3 |
| Mount | Surface Mount |
| Number of Terminals | 2 |
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