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IPB029N06N3GE8187ATMA1
- Part No
- IPB029N06N3GE8187ATMA1
- Manufacturer
- Infineon
- Description
- MOSFET N-CH 60V 120A TO263-3
- Datasheet
- IPB029N06N3GE8187ATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 120 A |
| Drain to Source Breakdown Voltage | 60 V |
| Drain to Source Resistance | 3.2 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 13 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 188 W |
| Min Breakdown Voltage | 60 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 188 W |
| Rds On Max | 3.2 mΩ |
| Turn-Off Delay Time | 62 ns |
| Turn-On Delay Time | 35 ns |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Terminals | 2 |
| Weight | 1.946308 g |
| Height | 4.5 mm |
| Length | 10.31 mm |
| Width | 9.45 mm |
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