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BSC159N10LSFGATMA1
- Part No
- BSC159N10LSFGATMA1
- Manufacturer
- Infineon
- Description
- Single N-Channel 100 V 15.9 mOhm 26 nC OptiMOS Power Mosfet - TDSON-8
- Datasheet
- BSC159N10LSFGATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9.4 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 15.9 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Fall Time | 6 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.9 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 114 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 15.9 mΩ |
| Package Quantity | 5000 |
| Packaging | Tape & Reel |
| Power Dissipation | 114 W |
| Rds On Max | 15.9 mΩ |
| Rise Time | 24 ns |
| Threshold Voltage | 1.85 V |
| Turn-Off Delay Time | 28 ns |
| Turn-On Delay Time | 13 ns |
| Case/Package | TO-220-3 |
| Number of Pins | 8 |
| Number of Terminals | 8 |
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