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IPA80R1K0CEXKSA2
- Part No
- IPA80R1K0CEXKSA2
- Manufacturer
- Infineon
- Description
- Single N-Channel 800 V 950 mOhm 31 nC CoolMOS Power Mosfet - TO-220-3FP
- Datasheet
- IPA80R1K0CEXKSA2
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.7 A |
| Drain to Source Breakdown Voltage | 800 V |
| Drain to Source Resistance | 950 mΩ |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 785 pF |
| Max Dual Supply Voltage | 800 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 32 W |
| Min Breakdown Voltage | 800 V |
| Min Operating Temperature | -40 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 950 mΩ |
| Package Quantity | 500 |
| Power Dissipation | 32 W |
| Rds On Max | 950 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 72 ns |
| Turn-On Delay Time | 25 ns |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Terminals | 3 |
| Height | 19.6 mm |
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