AUIRF7749L2TR Generic image

AUIRF7749L2TR

Part No
AUIRF7749L2TR
Manufacturer
Infineon
Description
60V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package, MG-WDSON-11, RoHS
Datasheet
AUIRF7749L2TR
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 36 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 1.1 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Gate to Source Voltage (Vgs) 60 V
    Input Capacitance 10.655 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 3.8 W
    Manufacturer Package Identifier AUIRF7749L2TR
    Min Operating Temperature -55 °C
    Number of Channels 1
    On-State Resistance 1.5 mΩ
    Package Quantity 4000
    Packaging Tape & Reel
    Power Dissipation 3.8 W
    Rds On Max 1.5 mΩ
    Threshold Voltage 2 V
    Turn-Off Delay Time 72 ns
    Turn-On Delay Time 29 ns
    Mount Surface Mount
    Height 740 µm
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