HUF75345G3 Generic image

HUF75345G3

Part No
HUF75345G3
Manufacturer
onsemi
Description
N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ
Datasheet
HUF75345G3
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 75 A
    Current Rating 75 A
    Drain to Source Breakdown Voltage 55 V
    Drain to Source Resistance 7 mΩ
    Drain to Source Voltage (Vdss) 55 V
    Element Configuration Single
    Fall Time 26 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 4 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 325 W
    Min Breakdown Voltage 55 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 325 W
    Rds On Max 7 mΩ
    Resistance 7 mΩ
    Rise Time 118 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 42 ns
    Turn-On Delay Time 14 ns
    Voltage Rating (DC) 55 V
    Case/Package TO-247
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.39 g
    Height 24.75 mm
    Length 15.87 mm
    Width 4.82 mm
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