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HGTG18N120BND
- Part No
- HGTG18N120BND
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail
- Datasheet
- HGTG18N120BND
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 2.45 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 54 A |
| Current Rating | 54 A |
| Element Configuration | Single |
| Fall Time | 200 ns |
| Max Collector Current | 54 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 390 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 390 W |
| Reverse Recovery Time | 75 ns |
| Rise Time | 22 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 170 ns |
| Turn-On Delay Time | 23 ns |
| Voltage Rating (DC) | 1.2 kV |
| Case/Package | TO-247-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.39 g |
| Height | 24.75 mm |
| Length | 15.87 mm |
| Width | 4.82 mm |
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