HUF75321D3ST Generic image

HUF75321D3ST

Part No
HUF75321D3ST
Manufacturer
onsemi
Description
N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ
Datasheet
HUF75321D3ST
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Current Rating 20 A
    Drain to Source Breakdown Voltage 55 V
    Drain to Source Resistance 36 mΩ
    Drain to Source Voltage (Vdss) 55 V
    Element Configuration Single
    Fall Time 66 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 680 pF
    Max Operating Temperature 175 °C
    Max Power Dissipation 93 W
    Min Breakdown Voltage 55 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 93 W
    Rds On Max 36 mΩ
    Resistance 36 mΩ
    Rise Time 55 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 47 ns
    Turn-On Delay Time 11 ns
    Voltage Rating (DC) 55 V
    Case/Package TO-252-3
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
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