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HGTG5N120BND
- Part No
- HGTG5N120BND
- Manufacturer
- onsemi
- Description
- HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate
- Datasheet
- HGTG5N120BND
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 1.2 kV |
| Collector Emitter Saturation Voltage | 2.45 V |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Continuous Collector Current | 21 A |
| Current Rating | 21 A |
| Element Configuration | Single |
| Fall Time | 200 ns |
| Max Breakdown Voltage | 600 V |
| Max Collector Current | 21 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 167 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 167 W |
| Reverse Recovery Time | 65 ns |
| Rise Time | 20 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Voltage Rating (DC) | 1.2 kV |
| Case/Package | TO-247 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.39 g |
| Height | 20.82 mm |
| Length | 15.87 mm |
| Width | 4.82 mm |
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